| PART |
Description |
Maker |
| FQA13N50C |
500V N-Channel Advance Q-FET C-Series
500V N-Channel MOSFET 13.5 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFF420 FN1891 |
1.6A, 500V, 3.000 Ohm, N-Channel
Power MOSFET(1.6A, 500V, 3.000 Ω, N沟道功率MOS场效应管)
1.6A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET
1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET
From old datasheet system
|
Intersil Corporation
|
| APT5020BN APT5022BN |
POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT5025BN APT5030BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IRF840S IRF840STRR IRF840STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI830G IRFI830GPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=3.1A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）\u003d 1.5ohm，身份证\u003d 3.1A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| JANSR2N7402 FN4374 |
3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
3A, 500V, 2.70 Ohm, Rad Hard, Channel Power MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| IRFR420 IRFU420 IRFU420PBF |
500V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=500V Rds(on)=3.0ohm Id=2.4A)
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A)
|
IRF[International Rectifier]
|
| IRF830S IRF830STRL IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
|
IRF[International Rectifier]
|
| STB6NB50 STB6NB50-1 |
FUSE/SM .8W, VMAX = 6 VDC, I(TRIP) = 2.2 A 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 5.8AI（四）|62AA
N-CHANNEL Power MOSFET
N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
N - CHANNEL 500V - 1.35 Ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
|
| IRF830B IRFS830B IRFS830BT |
500V N-Channel MOSFET
500V N-Channel B-FET / Substitute of IRFS830 & IRFS830A
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB2 |
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
